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SiHP17N60D-GE3 Datasheet(PDF) 2 Page - Vishay Siliconix |
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SiHP17N60D-GE3 Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 9 page SiHP17N60D www.vishay.com Vishay Siliconix S12-0813-Rev. B, 30-Apr-12 2 Document Number: 91464 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Note a. Repetitive rating; pulse width limited by maximum junction temperature. THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT Maximum Junction-to-Ambient RthJA -62 °C/W Maximum Junction-to-Case (Drain) RthJC -0.45 SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 μA 600 - - V VDS Temperature Coefficient V DS/TJ Reference to 25 °C, ID = 1 mA - 0.7 - V/°C Gate-Source Threshold Voltage (N) VGS(th) VDS = VGS, ID = 250 μA 3 - 5 V Gate-Source Leakage IGSS VGS = ± 30 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 600 V, VGS = 0 V - - 1 μA VDS = 480 V, VGS = 0 V, TJ = 125 °C - - 100 Drain-Source On-State Resistance RDS(on) VGS = 10 V ID = 8 A - 0.275 0.340 Forward Transconductancea gfs VDS = 50 V, ID = 8 A - 6.2 - S Dynamic Input Capacitance Ciss VGS = 0 V, VDS = 100 V, f = 1 MHz - 1780 - pF Output Capacitance Coss - 140 - Reverse Transfer Capacitance Crss -15 - Total Gate Charge Qg VGS = 10 V ID = 8 A, VDS = 480 V -45 90 nC Gate-Source Charge Qgs -14 - Gate-Drain Charge Qgd -22 - Turn-On Delay Time td(on) VDD = 300 V, ID = 8 A Rg = 9.1 , VGS = 10 V -22 45 ns Rise Time tr -56 85 Turn-Off Delay Time td(off) -37 75 Fall Time tf -30 60 Internal Gate Resistance Rg f = 1 MHz, open drain - 1.6 - Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS MOSFET symbol showing the integral reverse p - n junction diode -- 17 A Pulsed Diode Forward Current ISM -- 48 Body Diode Voltage VSD TJ = 25 °C, IS = 8 A, VGS = 0 V - - 1.5 V Body Diode Reverse Recovery Time trr TJ = 25 °C, IF = IS, dI/dt = 100 A/μs, VR = 20 V - 633 950 ns Body Diode Reverse Recovery Charge Qrr - 7 15 μC Reverse Recovery Current IRRM -21 42 A S D G |
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