CORPORATION

GBAS70/A/C/S

Page: 1/2

ISSUED DATE :2003/04/10

REVISED DATE :2005/12/28B

G

S

S U R F A C E M O U N T, S C H O T T K Y B A R R I E R D I O D E

V O L T A G E 7 0 V, C U R R E N T 7 0 m A

Description

These Schottky barrier diodes are designed for high speed switching applications, circuit protection and

voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is

excellent for hand held and portable applications where space is limited.

Package Dimensions

Millimeter

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

2.70

3.10

G

1.90 REF.

B

2.40

2.80

H

1.00

1.30

C

1.40

1.60

K

0.10

0.20

D

0.35

0.50

J

0.40

-

E

0

0.10

L

0.85

1.15

F

0.45

0.55

M

0°

10°

Parameter

Symbol

Ratings

Unit

Operating Junction Temperature

Tj

+125

:

Storage Temperature

Tstg

-65 ~ +125

:

Maximum Repetitive Peak Reverse Voltage

70

V

Maximum Average Forward Rectified Current

Io

70

mA

Non- Repetitive Peak Forward Surge Current @ tp 1.0s

100

mA

Thermal Resistance Junction to Ambient Air

445

: /W

Total Power Dissipation

PD

225

mW

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Reverse Breakdown Voltage

70

-

-

V

-

-

410

-

-

750

Forward Voltage

-

-

1000

mV

-

100

nA

Reverse Leakage Current

-

10

uA

Total Capacitance

-

-

2.0

pF

Reverse Recover Time

-

-

5.0

ns