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1N4450 Datasheet(PDF) 1 Page - GOOD-ARK Electronics |
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1N4450 Datasheet(HTML) 1 Page - GOOD-ARK Electronics |
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1 / 1 page Notes: (1) These diodes are also avaiable in glass case DO-34 (2) Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature Parameters for diodes in case DO-34: P tot=300mW T S=-65 to +175 T J=175 R tha 0.4K/mW Features 1N914 THRU 1N4454 SILICON EPITAXIAL PLANAR DIODES Silicon Epitaxial Planar Diodes for general purpose and switching The types 1N4149, 1N4447 and 1N4449 are also available in glass case DO-34. Electrical Characteristics 1 Type Peak reverse voltage Max. aver. rectified current Max. power dissip. at 25 Max. junction temper- ature Max. forward voltage drop Max. reverse current Max. reverse recovery time V RM VIO mA P tot mW T j V F V at I F mA I n nA at V R V t rr nS Conditions 1N914 100 75 500 200 1.0 10 25 20 Max. 4.0 I F=10mA, VR=6V, RL=100 , to I R=1mA 1N4149 1) 100 150 500 200 1.0 10 25 20 Max. 4.0 I F=10mA, VR=6V, RL=100 , to I R=1mA 1N4150 50 200 500 200 1.0 200 100 50 Max. 4.0 I F=IR=10 to 200 mA, to 0.1 IF 1N4152 40 150 400 175 0.55 0.10 50 30 Max. 2.0 I F=10mA, VR=6V, RL=100 , to I R=1mA 1N4153 75 150 400 175 0.55 0.10 50 50 Max. 2.0 I F=10mA, VR=6V, RL=100 , to I R=1mA 1N4154 35 150 2) 500 200 1.0 0.10 100 25 Max. 2.0 I F=10mA, VR=6V, RL=100 , to I R=1mA 1N4447 1) 100 150 500 200 1.0 20 25 20 Max. 4.0 I F=10mA, VR=6V, RL=100 , to I R=1mA 1N4449 1) 100 150 500 200 1.0 30 25 20 Max. 4.0 I F=10mA, VR=6V, RL=100 , to I R=1mA 1N4450 40 150 400 175 0.54 0.50 50 30 Max. 4.0 I F=IR=10mA, to IR=1mA 1N4451 40 150 400 175 0.50 0.10 50 30 Max. 10 I F=IR=10mA, to IR=1mA 1N4453 30 150 400 175 0.55 0.01 50 20 - - 1N4454 75 150 400 175 1.0 10 100 50 Max. 4.0 I F=IR=10mA, to IR=1mA DIM E NS IO NS DIM in c hes m m No te Min . Ma x . Min . Ma x . A - 0.154 - 3 .9 B - 0.075 - 1 .9 C - 0.020 - 0 .5 2 D 1 .083 - 27.50 - DIM E N S IO NS DIM in c hes m m No te Min . Ma x . Min . Ma x . A - 0.1 1 4 - 2.9 B - 0.075 - 1 .9 C - 0.017 - 0 .4 2 D 0 .630 - 16.0 - |
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