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GE50L02 Datasheet(PDF) 1 Page - E-Tech Electronics LTD |
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GE50L02 Datasheet(HTML) 1 Page - E-Tech Electronics LTD |
1 / 5 page GE50L02 Page: 1/5 ISSUED DATE :2005/12/16 REVISED DATE : G G E E 5500L L 0022 N-CHANNEL ENHANCEMENT MODE POWER MOSFET Description The GE50L02 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The through-hole version (TO-220) is available for low-profile applications and suited for low voltage applications such as DC/DC converters. Features *Low Gate Charge *Simple Drive Requirement *Fast Switching Characteristic Package Dimensions Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 4.40 4.80 c1 1.25 1.45 b 0.76 1.00 b1 1.17 1.47 c 0.36 0.50 L 13.25 14.25 D 8.60 9.00 e 2.54 REF. E 9.80 10.4 L1 2.60 2.89 L4 14.7 15.3 Ø 3.71 3.96 L5 6.20 6.60 A1 2.60 2.80 Absolute Maximum Ratings Parameter Symbol Ratings Unit Drain-Source Voltage VDS 25 V Gate-Source Voltage VGS ±20 V Continuous Drain Current, VGS@10V ID @TC=25 : 40 A Continuous Drain Current, VGS@10V ID @TC=100 : 27 A Pulsed Drain Current1 IDM 140 A Total Power Dissipation PD @TC=25 : 44.6 W Linear Derating Factor 0.36 W/ : Operating Junction and Storage Temperature Range Tj, Tstg -55 ~ +150 : Thermal Data Parameter Symbol Value Unit Thermal Resistance Junction-case Max. Rthj-c 2.8 : /W Thermal Resistance Junction-ambient Max. Rthj-a 62 / : W BVDSS 25V RDS(ON) 17m ID 40A Pb Free Plating Product |
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