Voltage on HVD, MIRIN, MIRCAP, and MIROUT

Relative to HVGND ..........................................-0.3V to +79V

Voltage on All Other Pins Relative

TQFN (derate 15.4mW/°C above +70°C)...............1228.9mW

Storage Temperature Range............................ -65°C to +150°C

Lead Temperature (soldering, 10s) .................................+300°C

Soldering Temperature (reflow).......................................+260°C

Electrical Characteristics

PARAMETER

SYMBOL

CONDITIONS

MIN

TYP

MAX

UNITS

Low Voltage Supply

2.85

3.63

V

Low Voltage Current

(Note 2)

8

16

mA

MIRIN Quiescent Current

ISRC/SHDN =

30kΩ to GND

1

2

mA

3.2

4

MIRIN Voltage

15

76

V

HV FET On-Resistance

0.85

2

Ω

HVG Voltage

0

0.3

V

HVD Voltage

76

V

HVD Leakage

-1

+1

µA

Logic-Input Thresholds (DIFFEN,

DISCHARGE, GAIN, HVG, SEN,

SENXOR)

0.3 x

V

0.7 x

ISRC/SHDN Threshold

1.4

V

0.2

ISRC/SHDN Resistor

(Note 3

29.7

30

30.3

kΩ

Maximum MIROUT Current

ISRC/SHDN =

low

1.4

2

2.8

mA

2.5

3.2

4.1

ISRC/SHDN = high

0.01

MIROUT Capacitive Load

Total capacitance on MIROUT to

achieve accuracy specification

330

500

pF

Logic Output Levels (ILIMS)

0.45

V

-0.45

DS3923

High-Speed Current Mirror

with Sample/Hold Output

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Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these

or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect

device reliability.