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G5645 Datasheet(PDF) 3 Page - Hamamatsu Corporation |
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G5645 Datasheet(HTML) 3 Page - Hamamatsu Corporation |
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3 / 4 page  GaAsP photodiode Diffusion type INCIDENT LIGHT LEVEL (lx) (Typ. Ta=25 ˚C, A light source fully illuminated) 10 -14 10 -12 10 -10 10 -8 10 -6 10 -4 10 -2 10 -16 10 -16 10 -12 10 -14 10 0 10 -2 10 -4 10 -6 10 -8 10 -10 10 0 Refer to NEP value in characteristic table. RL=100 Ω Borosilicate glass window may extend a maximum of 0.1 mm beyond the upper surface of the cap. CONNECTED TO CASE 4.7 ± 0.1 5.4 ± 0.2 2.54 ± 0.2 WINDOW 3.0 ± 0.2 0.45 LEAD (3.4) 6.5 ± 0.2 1.25 ± 0.25 1.25 ± 0.25 ACTIVE AREA 4.0 4.0 3.2 (FILTER) 4.0 N/C CATHODE ANODE PHOTOSENSITIVE SURFACE s s s s s Short circuit current linearity KGPDB0008EA ➀ G5645 s s s s s Dimensional outlines (unit: mm) KGPDA0012EA ➁ G5842, G6262 KGPDA0004EA |
Similar Part No. - G5645 |
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Similar Description - G5645 |
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