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G8605-12 Datasheet(PDF) 1 Page - Hamamatsu Corporation

Part # G8605-12
Description  InGaAs PIN photodiode
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Manufacturer  HAMAMATSU [Hamamatsu Corporation]
Direct Link  http://www.hamamatsu.com
Logo HAMAMATSU - Hamamatsu Corporation

G8605-12 Datasheet(HTML) 1 Page - Hamamatsu Corporation

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PHOTODIODE
InGaAs PIN photodiode
Thermoelectrically cooled NIR (near infrared) detector with low noise and high-speed response
G8605 series
Features
l High-speed response
l Low noise
l Various active area sizes available from φ1 to φ5 mm
Applications
l Optical power meter
l Water content analyzer
l Laser diode life test
InGaAs PIN photodiodes have small terminal capacitance for high-speed response and also feature high shunt resistance and very low noise.
G8605 series of InGaAs PIN photodiodes are thermoelectrically cooled types that decrease the dark current to achieve high D*. One-stage (-10 ˚C)
and two-stage (-20 ˚C) thermoelectrically cooled types are provided.
Accessories (Optional)
l Preamp for InGaAs PIN photodiode
C4159-02
(High-speed type)
l Preamp for InGaAs PIN photodiode
C4159-03
(High sensitivity type)
l Heatsink for one-stage TE-cooled type
A3179
l Heatsink for two-stage TE-cooled type
A3179-01
l Temperature controller for TE-cooled type C1103-04
1
s Specifications / Absolute maximum ratings
Absolute maximum ratings
Active
area
Thermistor
power
dissipation
TE-cooler
allowable
current
Reverse
voltage
VR Max.
Operating
temperature
Topr
Storage
temperature
Tstg
Type No.
Dim ensional
ou tlin e/
W in dow
m a te ria l *
Package
Cooling
(mm)
(mW)
(A)
(V)
(°C)
(°C)
G8605-11
φ1
5
G8605-12
φ2
5
G8605-13
φ3
5
G8605-15
➀/K
One-stage
TE-cooled
φ5
1.5
2
G8605-21
φ1
5
G8605-22
φ2
5
G8605-23
φ3
5
G8605-25
➁/K
TO-8
Two-stage
TE-cooled
φ5
0.2
1.0
2
-40 to +70
-55 to +85
s Electrical and optical characteristics (Typ. unless otherwise noted)
M easurem ent
condition
Element
tem perature
S pec tral
respo nse
ran ge
λ
Pea k
sensitivity
w ave le ngth
λp
Photo
sensitivity
S
D a rk c u rre n t
ID
VR=1 V
Cut-off
freq ue ncy
fc
VR=1 V
RL=50
Terminal
capacitance
Ct
VR=1 V
f=1 MHz
Shunt
re sista n ce
Rsh
VR=10 mV
D∗
λ=λp
NEP
λ=λp
Type No.
(°C)
(µm)
(µm)
1.3 µ m
(A /W )
λ=λp
(A /W )
Typ .
(n A )
Ma x .
(n A )
(MHz)
(pF)
(M
Ω)
(cm ·H z1/2/W ) (W/Hz
1/2)
G8605-11
0.07
0.35
18
150
1500
5 × 10
-15
G8605-12
0.3
1 .5
4
550
300
1 × 10
-14
G8605-13
15
2
1000
100
2 × 10
-14
G8605-15
-10
0.9 to 1 .6 7
2.5
1 2 .5
0.6
3500
30
2 × 10
13
3 × 10
-14
G8605-21
0.03
0.15
18
150
3000
3 × 10
-15
G8605-22
0.15
0.75
4
550
600
7 × 10
-15
G8605-23
0.5
2 .5
2
1000
200
1 × 10
-14
G8605-25
-20
0.9 to 1 .6 5
1.55
0.9
0 .95
1.2
6
0.6
3500
60
3 × 10
13
2 × 10
-14
* Window material K: borosilicate glass with anti-reflective coating (optimized for 1.55
µm peak)


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