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RJH1CV6DPQ-E0 Datasheet(PDF) 4 Page - Renesas Technology Corp |
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RJH1CV6DPQ-E0 Datasheet(HTML) 4 Page - Renesas Technology Corp |
4 / 10 page RJH1CV6DPQ-E0 Preliminary R07DS0524EJ0700 Rev.7.00 Page 4 of 9 Jun 13, 2013 60 80 40 20 0 1.0 4.0 3.5 2.5 3.0 2.0 1.5 10 8 6 4 2 0 Typical Transfer Characteristics Gate to Emitter Voltage VGE (V) Gate to Emitter Cutoff Voltage vs. Case Temparature (Typical) −25 0 25 75 125 50 100 150 VCE = 10 V Pulse Test Case Temparature Tc (°C) 1 mA IC = 10 mA Gate to Emitter Voltage VGE (V) 1 3 2 4 5 1 3 2 4 5 812 20 16 10 18 14 8 12 20 16 10 18 14 Collector to Emitter Satularion Voltage vs. Gate to Emitter Voltage (Typical) Collector to Emitter Satularion Voltage vs. Gate to Emitter Voltage (Typical) Gate to Emitter Voltage VGE (V) Tc = 25°C Pulse Test Tc = 150°C Pulse Test IC = 60 A 30 A IC = 60 A 30 A 0 4 8 12 20 16 Tc= 25°C 150°C VCE = 10 V Pulse Test Collector to Emitter Saturation Voltage vs. Case Temparature (Typical) −25 0 25 75 125 50 100 150 Case Temparature Tc (°C) 30 A IC = 60 A VGE = 15 V Pulse Test 25 20 15 10 5 0 Frequency Characteristics (Typical) Frequency f (kHz) 1 100 10 1000 Tj = 125°C Tc = 90°C VCE = 400 V VGE = 15 V Rg = 5 Ω duty = 50% 0 Collector current wave (Square wave) |
Similar Part No. - RJH1CV6DPQ-E0_13 |
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Similar Description - RJH1CV6DPQ-E0_13 |
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