RJH1CV6DPQ-E0_13 datasheet(4/10 Pages) RENESAS

Part #	RJH1CV6DPQ-E0

Description	Short circuit withstand time (5 us typ.)

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Manufacturer	RENESAS [Renesas Technology Corp]

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4 / 10 page

RJH1CV6DPQ-E0

Preliminary

R07DS0524EJ0700 Rev.7.00

Page 4 of 9

Jun 13, 2013

60

80

40

20

0

1.0

4.0

3.5

2.5

3.0

2.0

1.5

10

8

6

4

2

0

Typical Transfer Characteristics

Gate to Emitter Voltage VGE (V)

Gate to Emitter Cutoff Voltage

vs. Case Temparature (Typical)

−25

0

25

75

125

50

100

150

VCE = 10 V

Pulse Test

Case Temparature Tc (°C)

1 mA

IC = 10 mA

Gate to Emitter Voltage VGE (V)

1

3

2

4

5

1

3

2

4

5

812

20

16

10

18

14

8

12

20

16

10

18

14

Collector to Emitter Satularion Voltage vs.

Gate to Emitter Voltage (Typical)

Collector to Emitter Satularion Voltage vs.

Gate to Emitter Voltage (Typical)

Gate to Emitter Voltage VGE (V)

Tc = 25°C

Pulse Test

Tc = 150°C

Pulse Test

IC = 60 A

30 A

IC = 60 A

30 A

0

4

8

12

20

16

Tc= 25°C

150°C

VCE = 10 V

Pulse Test

Collector to Emitter Saturation Voltage

vs. Case Temparature (Typical)

−25

0

25

75

125

50

100

150

Case Temparature Tc (°C)

30 A

IC = 60 A

VGE = 15 V

Pulse Test

25

20

15

10

5

0

Frequency Characteristics (Typical)

Frequency f (kHz)

1

100

10

1000

Tj = 125°C

Tc = 90°C

VCE = 400 V

VGE = 15 V

Rg = 5

Ω

duty = 50%

0

Collector current wave

(Square wave)

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RJH1CV6DPQ-E0 Datasheet(PDF) 4 Page - Renesas Technology Corp

RJH1CV6DPQ-E0 Datasheet(HTML) 4 Page - Renesas Technology Corp

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