 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
1SS286 Datasheet(PDF) 2 Page - Hitachi Semiconductor |
|
||||||||||||||||||||||||||||||
1SS286 Datasheet(HTML) 2 Page - Hitachi Semiconductor |
|
|
2 / 6 page  1SS286 Rev.1, Sep. 1995, page 2 of 6 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Value Unit Reverse voltage V R 25 V Forward current I F 35 mA Power dissipation Pd 150 mW Junction temperature Tj 100 °C Storage temperature Tstg –55 to +100 °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Condition Forward voltage V F —— 0.6 V I F = 10mA Reverse voltage V R 25 — — V I R = 10µA Reverse current I R — — 10 nA V R= 10V Capacitance C — — 1.2 pF V R = 0V, f = 1MHz Capacitance deviation ∆C— — 0.1 pF V R = 0V, f = 1MHz Forward voltage deviation ∆V F —— 10 mV I F = 10mA ESD-Capability — 10 — — V * 1C = 200pF, Both forward and reverse direction 1 pulse. Notes: 1. Failure criterion; I R ≥ 20µA 2. Each group shall unify a multiple of 4 diodes |
Similar Part No. - 1SS286 |
|
Similar Description - 1SS286 |
|
|
|
Link URL |
| Privacy Policy |
| ALLDATASHEET.NET |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
English ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
