GTT3434

Page: 2/4

ISSUED DATE :2006/10/31

REVISED DATE :

Electrical Characteristics (Tj = 25 :::: unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Drain-Source Breakdown Voltage

30

-

-

V

Gate Threshold Voltage

0.6

-

-

V

Forward Transconductance

-

20

-

S

Gate-Source Leakage Current

-

-

±100

nA

Drain-Source Leakage Current(Tj=25 )

:

-

-

1

uA

Drain-Source Leakage Current(Tj=70 )

:

-

-

5

uA

-

-

34

-

-

50

m

-

8

12

Gate-Source Charge

-

1.9

-

Gate-Drain (“Miller”) Change

-

2.6

-

nC

-

21

-

Rise Time

-

45

-

Turn-off Delay Time

-

40

-

Fall Time

-

30

-

ns

Source-Drain Diode

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

-

-

1.2

V

-

40

-

ns

Notes: 1. Pulse width limited by Max. junction temperature.

2. Pulse width 300us, duty cycle 2%.

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