2SB1059 datasheet(2/4 Pages) HITACHI

Part #	2SB1059

Description	Silicon PNP Epitaxial

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Manufacturer	HITACHI [Hitachi Semiconductor]

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2SB1059

2

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Ratings

Unit

Collector to base voltage

V

CBO

–70

V

Collector to emitter voltage

V

CEO

–50

V

Emitter to base voltage

V

EBO

–6

V

Collector current

I

C

–1

A

Collector power dissipation

P

C

0.75

W

Junction temperature

Tj

150

°C

Storage temperature

Tstg

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test conditions

Collector to base breakdown

voltage

V

(BR)CBO

–70

—

V

I

C = –10 µA, IE = 0

Collector to emitter breakdown

voltage

V

(BR)CEO

–50

—

V

I

C = –1 mA, RBE = ∞

Emitter to base breakdown

voltage

V

(BR)EBO

–6

—

V

I

E = –10 µA, IC = 0

Collector cutoff current

I

CBO

——

–1

µAV

CB = –55 V, IE = 0

Emitter cutoff current

I

EBO

—

–0.2

µAV

EB = –6 V, IC = 0

DC current transfer ratio

h

FE*

1

100

—

320

V

CE = –2 V, IC = –0.1 A

Collector to emitter saturation

voltage

V

CE(sat)

—

–0.6

V

I

C = –1 A, IB = –0.1 A

Gain bandwidth product

f

T

—

65

—

MHz

V

CE = –2 V, IC = –10 mA

Collector output capacitance

Cob

—

35

—

pF

V

CB = –10 V, IE = 0, f = 1 MHz

Note:

1. The 2SB1059 is grouped by h

FE as follows.

BC

100 to 200

160 to 320

See characteristic curves of 2SB740.

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