2SB1400 datasheet(2/6 Pages) HITACHI

Part #	2SB1400

Description	Silicon PNP Epitaxial

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Manufacturer	HITACHI [Hitachi Semiconductor]

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2SB1400

2

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Ratings

Unit

Collector to base voltage

V

CBO

–120

V

Collector to emitter voltage

V

CEO

–120

V

Emitter to base voltage

V

EBO

–7

V

Collector current

I

C

–6

A

Collector peak current

I

C(peak)

–10

A

Collector power dissipation

P

C

2W

P

C*

1

25

Junction temperature

Tj

150

°C

Storage temperature

Tstg

–55 to +150

°C

Note:

1. Value at T

C = 25°C.

Electrical Characteristics (Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test conditions

Collector to base breakdown

voltage

V

(BR)CBO

–120

—

V

I

C = –0.1 mA, IE = 0

Collector to emitter breakdown

voltage

V

(BR)CEO

–120

—

V

I

C = –25 mA, RBE = ∞

Emitter to base breakdown

voltage

V

(BR)EBO

–7

—

V

I

E = –50 mA, IC = 0

Collector cutoff current

I

CBO

—

–10

µAV

CB = –100 V, IE = 0

I

CEO

—

–10

V

CE = –100 V, RBE = ∞

DC current transfer ratio

h

FE

1000

—

20000

V

CE = –3 V, IC = –3 A*

1

Collector to emitter saturation

V

CE(sat)1

—

–1.5

V

I

C = –3 A, IB = –6 mA*

1

voltage

V

CE(sat)2

—

–3.0

I

C = –6 A, IB = –60 mA*

1

Base to emitter saturation

V

BE(sat)1

—

–2.0

V

I

C = –3 A, IB = –6 mA*

1

voltage

V

BE(sat)2

—

–3.5

I

C = –6 A, IB = –60 mA*

1

Note:

1. Pulse test.

See switching characteristic curve of 2SB727(K).

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