Rev. E

333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541

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2N3507

Silicon NPN Transistor

Data Sheet

Description

• Screening and processing per MIL-PRF-19500

• JAN level (2N3507J)

• JANTX level (2N3507JX)

• JANTXV level (2N3507JV)

• JANS level (2N3507JS)

• QCI to the applicable level

• 100% die visual inspection per MIL-STD-750 method

2072 for JANTXV and JANS

• Radiation testing (total dose) upon request

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Applications

• General purpose switching transistor

• Low power

• NPN silicon transistor

Features

• Hermetically sealed TO-39 metal can

• Also available in chip configuration

• Chip geometry 1506

• Reference document:

MIL-PRF-19500/349

Benefits

• Qualification Levels: JAN, JANTX,

JANTXV and JANS

• Radiation testing available

Absolute Maximum Ratings

Parameter

Symbol

Rating

Unit

Collector-Emitter Voltage

50

Volts

Collector-Base Voltage

80

Volts

Emitter-Base Voltage

5

Volts

Collector Current, Continuous

3

A

1

5.71

W

mW/

°C

5

28.6

W

mW/

°C

Thermal Resistance

175

°C/W

Operating Junction Temperature

Storage Temperature

-65 to +200

°C

Copyright

 2010

Please contact SEMICOA for special configurations

SEMICOA Corporation