©2002 Fairchild Semiconductor Corporation

Rev. C1, October 2002

Si N-channel Junction FET

Symbol

Parameter

Ratings

Units

Gate-Drain Voltage

-20

V

Gate Current

10

mA

Drain Current

1

mA

Power Dissipation

100

mW

Junction Temperature

150

°C

Storage Temperature

-55 ~ 150

°C

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Units

Gate-Drain Breakdown Voltage

-20

V

Gate-Source Cut-off Voltage

-0.6

-1.5

V

Drain Current

150

350

µA

Forward Transfer Admittance

0.4

1.2

ms

Input Capacitance

3.5

pF

Output Capacitance

0.65

pF

KSK595H

Capacitor Microphone Applications

• Especially Suited for use in Audio, Telephone Capacitor Microphones

• Excellent Voltage Characteristic

• Excellent Transient Characteristic

1.Drain 2. Source 3. Gate

SOT-23

1

2

3