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2SC4046 Datasheet(PDF) 2 Page - Hitachi Semiconductor |
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2SC4046 Datasheet(HTML) 2 Page - Hitachi Semiconductor |
2 / 6 page 2SC4046 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V (BR)CBO 120 — — V I C = 10 µA, IE = 0 Collector to emitter breakdown voltage V (BR)CEO 120 — — V I C = 1 mA, RBE = ∞ Emitter to base breakdown voltage V (BR)EBO 5— — V I E = 10 µA, IC = 0 Collector cutoff current I CBO —— 10 µAV CB = 80 V, IE = 0 DC current transfer ratio h FE* 1 250 — 800 V CE = 5 V, IC = 10 mA Base to emitter voltage V BE — — 1.0 V Collector to emitter saturation voltage V CE(sat) — — 1.0 V I C = 200 mA, IB = 20 mA Gain bandwidth product f T — 350 — MHz V CE = 10 V, IC = 50 mA Collector output capacitance Cob — 3.5 — pF V CB = 30 V, f = 1 MHz, IE = 0 Note: 1. The 2SC4046 is grouped by h FE as follows. Grade D E h FE 250 to 500 400 to 800 0 50 150 100 Case Temperature TC (°C) Maximum Collector Dissipation Curve 4 6 10 2 8 12 0.01 0.1 1.0 Collector to emitter Voltage VCE (V) 1 10 100 1,000 Area of Safe Operation DC Operation TC = 25°C Single Pulse Ta = 25 °C (25 V, 0.4 A) (80 V, 0.125 A) (120 V, 0.055 A) (120 V, 0.05 A) (80 V, 0.1 A) |
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