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2SC4126 Datasheet(PDF) 2 Page - Hitachi Semiconductor |
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2SC4126 Datasheet(HTML) 2 Page - Hitachi Semiconductor |
2 / 8 page 2SC4126 2 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage V CBO 15 V Collector to emitter voltage V CEO 11 V Emitter to base voltage V EBO 2V Collector current I C 50 mA Collector power dissipation P C 150 mW Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V (BR)CBO 15 ——V I C = 10 µA, IE = 0 Collector cutoff current I CBO —— 1 µAV CB = 12 V, IE = 0 I CEO —— 1 µAV CE = 10 V, RBE = ∞ Emitter cutoff current I EBO —— 1 µAV EB = 1 V, IC = 0 DC current transfer ratio h FE 50 — 250 V CE = 5 V, IC = 20 mA Collector output capacitance Cob — 1.0 1.5 pF V CB = 5 V, IE = 0, f = 1 MHz Gain bandwidth product f T 4.5 6.0 — GHz V CE = 5 V, IC = 20 mA Power gain PG 9.0 11.0 — dB V CE = 5 V, IC = 20 mA, f = 900 MHz Noise figure NF — 1.5 3.0 dB V CE = 5 V, IC = 5 mA, f = 900 MHz Note: Marking is “MI–”. |
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