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2SC458 Datasheet(PDF) 2 Page - Hitachi Semiconductor |
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2SC458 Datasheet(HTML) 2 Page - Hitachi Semiconductor |
2 / 9 page 2SC458 (K) 2 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage V CBO 30 V Collector to emitter voltage V CEO 30 V Emitter to base voltage V EBO 5V Collector current I C 100 mA Emitter current I E –100 mA Collector power dissipation P C 200 mW Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V (BR)CBO 30 — — V I C = 10 µA, IE = 0 Collector to emitter breakdown voltage V (BR)CEO 30 — — V I C = 1 mA, RBE = ∞ Emitter to base breakdown voltage V (BR)EBO 5— — V I E = 10 µA, IC = 0 Collector cutoff current I CBO — — 0.5 µAV CB = 18 V, IE = 0 Emitter cutoff current I EBO — — 1.0 µAV EB = 4 V, IC = 0 DC current transfer ratio h FE* 1 100 — 500 V CE = 1 V, IC = 10 mA Collector to emitter saturation voltage V CE(sat) — — 0.4 V I C = 10 mA, IB = 1 mA Base to emitter voltage V BE(sat) — — 1.0 V I C = 10 mA, IB = 1 mA Gain bandwidth product f T 100 — — MHz V CE = 10 V, IC = 10 mA Collector output capacitance Cob — — 4 pF V CB = 10 V, IE = 0, f = 1 MHz Turn on time t on — 80 — ns I C = 10 IB1 = –10 IB2 = 10 mA, V CC = 10 V Turn off time t off — 300 — ns Storage time t stg — 260 — ns I C = IB1 = –IB2 = 20 mA, V CC = 5 V Note: 1. The 2SC458 (K) is grouped by h FE as follows. BC D 100 to 200 160 to 320 250 to 500 |
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