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1N5768 Datasheet(PDF) 1 Page - Sensitron |
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1N5768 Datasheet(HTML) 1 Page - Sensitron |
1 / 3 page • 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 • • World Wide Web Site - http://www.sensitron.com • E-Mail Address - sales@sensitron.com • SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 5151, REV. - Isolated Diode Array Applications: • High Frequency Data Lines • RS-323 & RS-432 Networks • LAN, Ethernet, I/O Ports • IEC61000-4 compatible for ESD / EFT / Surge Features: • Protects up to 8 I/O Ports • Isolated diodes eliminate crosstalk • High Density Packaging • High Breakdown Voltage; High Speed Switching (< 10 nsec) • Low Capacitance; Low Leakage • Hermetic Ceramic package • TX, TXV, S level screening available Maximum Ratings: All ratings are at 25 oC unless otherwise noted Characteristics Symbol Condition Max. Units Reverse Breakdown Voltage VBR Per diode @ 10 µA 60 Vdc Continuous Forward Current IO Per diode, Derate at 2.4 mA/°C above +25 °C 300 mA Peak Surge Current IFSM Per diode, tP = 8.3 msec 500 mA Power Dissipation PD Per Junction, Derate at 4.0 mW/°C above +25 °C 400 mW Power Dissipation PD Per Package, Derate at 4 mW/ oC above 25 oC 500 mW Max. Operating Temperature TJ - -65 to +150 °C Max. Storage Temperature Tstg - -65 to +200 °C Electrical Characteristics: All ratings are per diode and at 25 oC unless otherwise noted Characteristics Symbol Condition Max. Units VF1 If = 100mAdc 1.00 V Max. Forward Voltage Drop VF2 Pulsed PW = 300 µs If = 500mAdc 1.50 V Max. Reverse Current IR1 @VR = 40V 0.1 µA Max. Capacitance (Pin to Pin) CT @VR = 0V, f =1MHz 4 pF Max. Forward Recovery Time TFR IF = 500mA 40 ns Max. Reverse Recovery Time TRR IF = IR = 200 mA dc, IRR = 20 mA dc, RL = 100 ohms 20 ns 1N5768 |
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