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2SD1135 Datasheet(PDF) 2 Page - Hitachi Semiconductor |
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2SD1135 Datasheet(HTML) 2 Page - Hitachi Semiconductor |
2 / 5 page 2SD1135 2 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to emitter breakdown voltage V (BR)CEO 80 — — V I C = 50 mA, RBE = ∞ Emitter to base breakdown voltage V (BR)EBO 5— — V I E = 10 µA, IC = 0 Collector cutoff current I CBO — — 0.1 mA V CB = 80 V, IE = 0 DC current transfer ratio h FE1* 1 60 — 200 V CE = 5 V, IC = 1 A* 2 h FE2 35 — — V CE = 5 V, IC = 0.1 A* 2 Base to emitter voltage V BE — — 1.5 V V CE = 5 V, IC = 1 A* 2 Collector to emitter saturation voltage V CE(sat) — — 2VI C = 2 A, IB = 0.2 A* 2 Gain bandwidth product f T — 10 — MHz V CE = 5 V, IC = 0.5 A* 2 Collector output capacitance Cob — 40 — pF V CB = 20 V, IE = 0, f = 1 MHz Notes: 1. The 2SD1135 is grouped by h FE1 as follows. 2. Pulse test. BC 60 to 120 100 to 200 0 50 100 150 Case temperature TC (°C) Maximum Collector Dissipation Curve 20 40 60 0.05 0.1 0.2 0.5 1.0 2 5 Collector to emitter voltage VCE (V) 1 2 5 10 20 50 100 Area of Safe Operation IC max (Continuous) (10 V, 4 A) (33 V, 1.2 A) (80 V, 0.06 A) DC Operation (T C = 25 °C) |
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Similar Description - 2SD1135 |
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