2SH30 datasheet(2/8 Pages) HITACHI

Part #	2SH30

Description	Silicon N Channel IGBT High Speed Power Switching

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Manufacturer	HITACHI [Hitachi Semiconductor]

Direct Link	http://www.renesas.com/eng

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2SH30

2

Absolute Maximum Ratings (Ta = 25

°C)

Item

Symbol

Ratings

Unit

Collector to Emitter voltage

V

CES

600

V

Gate to Emitter voltage

V

GES

±20

V

Collector current

I

C

50

A

Collector peak current

ic(peak)

100

A

Collector dissipation

P

C

Note1

100

W

Channel temperature

Tj

150

°C

Storage temperature

Tstg

–55 to +150

°C

Note:

1. Value at Tc = 25

°C

Electrical Characteristics (Ta = 25

°C)

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

Zero gate voltage collector

current

I

CES

—

250

µAV

CE = 600V, VGE = 0

Gate to emitter leak current

I

GES

——

±1

µAV

GE = ± 20 V, VCE = 0

Gate to emitter cutoff voltage

V

GE(off)

6.0

—

8.0

V

I

C = 50 mA, VCE = 10V

Collector to emitter saturation

voltage

V

CE(sat)

—

2.1

2.6

V

I

C = 50 A, VGE = 15V

Input capacitance

Cies

—

2800

—

pF

V

CE = 10V,

V

GE = 0

f = 1MHz

Switching time

t

r

—

280

—

ns

I

C = 50 A

t

on

—

430

—

ns

R

L = 6 Ω

t

f

—

300

600

ns

V

GS = ±15V

t

off

—

650

1300

ns

Rg = 50

Ω

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2SH30 Datasheet(PDF) 2 Page - Hitachi Semiconductor

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