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2SH31 Datasheet(PDF) 2 Page - Hitachi Semiconductor |
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2SH31 Datasheet(HTML) 2 Page - Hitachi Semiconductor |
2 / 8 page 2SH31 2 Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Ratings Unit Collector to Emitter voltage V CES 600 V Gate to Emitter voltage V GES ±20 V Collector current I C 75 A Collector peak current ic(peak) 150 A Collector dissipation P C Note1 150 W Channel temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Note: 1. Value at Tc = 25 °C Electrical Characteristics (Ta = 25 °C) Item Symbol Min Typ Max Unit Test Conditions Zero gate voltage collector current I CES 100 µAV CE = 600V, VGE = 0 Gate to emitter leak current I GES ±1 µAV GE = ± 20 V, VCE = 0 Gate to emitter cutoff voltage V GE(off) 6.0 8.0 V I C = 75mA, VCE = 10V Collector to emitter saturation voltage V CE(sat) 2.1 2.6 V I C = 75A, VGE = 15V Input capacitance Cies 4100 pF V CE = 10V, V GE = 0 f = 1MHz Switching time t r 400 ns I C = 75A t on 600 ns R L = 4 Ω t f 300 600 ns V GS = ±15V t off 800 1600 ns Rg = 50 Ω |
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