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2SJ278 Datasheet(PDF) 3 Page - Hitachi Semiconductor

Part # 2SJ278
Description  Silicon P-Channel MOS FET
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Manufacturer  HITACHI [Hitachi Semiconductor]
Direct Link  http://www.renesas.com/eng
Logo HITACHI - Hitachi Semiconductor

2SJ278 Datasheet(HTML) 3 Page - Hitachi Semiconductor

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2SJ278
3
2.0
1.5
1.0
0.5
0
50
100
150
200
Ambient Temperature
Ta (
°C)
Power vs. Temperature Derating
–5
Drain to Source Voltage
V
(V)
DS
Maximum Safe Operation Area
–3
–1
–0.3
–0.1
–0.03
–0.01
–0.005
–0.1 –0.3
–1
–3
–10
–30
–100
100
µs
PW
=
10
ms
(1shot)
Operation in
this area is
limited by RDS(on)
10
µs
Ta = 25 °C
DC
Operation
–2.0
–1.6
–1.2
–0.8
–0.4
0
–2
–4
–6
–8
–10
Drain to Source Voltage
V
(V)
DS
–3 V
Pulse Test
V
= –2 V
GS
–2.5 V
Typical Output Characteristics
–10 V
–6 V
–4 V
–1.0
–0.8
–0.6
–0.4
–0.2
0
–1–2–3
–4
–5
Gate to Source Voltage
V
(V)
GS
V
= –10 V
Pulse Test
DS
75 °C
Typical Transfer Characteristics
Tc = –25 °C
25 °C


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