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2SJ361 Datasheet(PDF) 2 Page - Hitachi Semiconductor

Part # 2SJ361
Description  Silicon P-Channel MOS FET
Download  9 Pages
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Manufacturer  HITACHI [Hitachi Semiconductor]
Direct Link  http://www.renesas.com/eng
Logo HITACHI - Hitachi Semiconductor

2SJ361 Datasheet(HTML) 2 Page - Hitachi Semiconductor

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2SJ361
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
–20
V
Gate to source voltage
V
GSS
±20
V
Drain current
I
D
–2
A
Drain peak current
I
D(pulse)*
1
–4
A
Body to drain diode reverse drain current
I
DR
–2
A
Channel dissipation
Pch*
2
1W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤ 10 µs, duty cycle ≤ 1%
2. Value on the alumina ceramic board (12.5
×20×0.7 mm)
3. Marking is “RY”.


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