FDMS3606AS datasheet(5/15 Pages) FAIRCHILD

Part #	FDMS3606AS

Description	PowerTrench Power Stage 30 V Asymmetric Dual N-Channel MOSFET

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Manufacturer	FAIRCHILD [Fairchild Semiconductor]

Direct Link	http://www.fairchildsemi.com

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5 / 15 page

FDMS3606AS Rev.C4

www.fairchildsemi.com

5

Figure 7.

0

5

10

15

20

25

0

2

4

6

8

10

ID = 13 A

VDD = 20 V

VDD = 10 V

Qg, GATE CHARGE (nC)

VDD = 15 V

Gate Charge Characteristics

Figure 8.

0.1

1

10

30

10

100

1000

2000

f = 1 MHz

VGS = 0 V

VDS, DRAIN TO SOURCE VOLTAGE (V)

Crss

Coss

Ciss

Capacitance vs Drain

to Source Voltage

Figure9.

0.01

0.1

1

10

100

1

10

20

TJ = 100 oC

TJ = 25 oC

TJ = 125 oC

t

AV, TIME IN AVALANCHE (ms)

UnclampedInductive

Switching Capability

Figure 10. Maximum Continuous Drain

Current vs Case Temperature

25

50

75

100

125

150

0

20

40

60

80

100

Limited by Package

VGS = 4.5 V

RθJC = 3.5

o

C/W

VGS = 10 V

T

C

, CASE TEMPERATURE (

o

C

)

Figure 11. Forward Bias Safe

Operating Area

Figure 12. Single Pulse Maximum

Power Dissipation

Typical Characteristics (Q1 N-Channel) T

J = 25 °C unless otherwise noted

0.01

0.1

1

10

100

0.01

0.1

1

10

100

DC

100 ms

10 ms

1 ms

1s

VDS, DRAIN to SOURCE VOLTAGE (V)

THIS AREA IS

LIMITED BY rDS(on)

SINGLE PULSE

TJ = MAX RATED

RθJA = 125

oC/W

TA = 25

oC

10s

100us

200

10

-4

10

-3

10

-2

10

-1

110

100

1000

0.1

1

10

100

1000

SINGLE PULSE

RθJA = 125

oC/W

TA = 25

oC

t, PULSE WIDTH (sec)

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