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ICE20N170FP Datasheet(PDF) 1 Page - Micross Components |
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ICE20N170FP Datasheet(HTML) 1 Page - Micross Components |
1 / 4 page ICE20N170FP N-Channel Enhancement Mode MOSFET Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability High Peak Current Capability Increased Transconductance Performance Optimized Design For High Performance Power Systems Symbol Parameter Value Unit Conditions ID Continous Drain Current 20 A TC = 25°C ID, pulse Pulsed Drain Current 62 A TC = 25°C EAS Avalanche Energy, Single Pulse 520 mJ ID = 10A IAR Avalanche Current, Repetitive 20 A Limited by Tjmax dv/dt MOSFET dv/dt Ruggedness 50 V/ns VDS = 480V, ID = 20A, Tj = 125°C VGS Gate Source Voltage ±20 V Static ±30 AC (f>Hz) Ptot Power Dissipation 35 W TC = 25°C Tj, Tstg Operating and Storage Temperature -55 to +150 °C Mounting Torque 50 Ncm M 2.5 screws Maximum Ratings @ Tj = 25°C, Unless Otherwise Specified Product Summary ID TA = 25°C 20A Max V(BR)DSS ID = 250uA 600V Min rDS(ON) VGS = 10V 0.17Ω Typ Qg VDS = 480V 62nC Typ Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603 788920, Web: www.micross.com, Email: chipcomponents@micross.com 1 Thermal Characteristics RthJC Thermal Resistance, Junction to Case - - 3.5 °C/W RthJA Thermal Resistance, Junction to Ambient - - 72 Leaded Tsold Soldering Temperature, Wave Soldering Only Al- lowed At Leads - - 260 °C 1.6mm (0.063in.) from Case for 10s Pin Description: TO-220 D G S Symbol Parameter Values Unit Conditions Min Typ Max Electrical Characteristics @ Tj = 25°C, Unless Otherwise Specified Static Characteristics V(BR)DSS Drain to Source Breakdown Voltage 600 640 - V VGS = 0V, ID = 250µA V GS(th) Gate Threshold Voltage 2.1 3 3.9 VDS = VGS, ID = 250µA IDSS Zero Gate Voltage Drain Current - 0.1 1 µA VDS = 600V, VGS = 0V, Tj = 25°C - - 100 VDS = 600V, VGS = 0V, Tj = 150°C IGSS Gate Source Leakage Current - - 100 nA VGS = ±20v, VDS = 0V RDS(on) Drain to Source On-State Resistance - 0.17 0.199 Ω VGS = 10V, ID = 10A, Tj = 25°C - 0.52 - VGS = 10V, ID = 10A, Tj = 150°C RGS Gate Resistance - 4.3 - Ω f = 1 MHz, open drain |
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