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2SJ552S Datasheet(PDF) 1 Page - Hitachi Semiconductor |
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2SJ552S Datasheet(HTML) 1 Page - Hitachi Semiconductor |
1 / 9 page 2SJ552(L),2SJ552(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-651B (Z) 3rd. Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.042Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. Outline 1. Gate 2. Drain 3. Source 4. Drain 1 2 3 4 1 2 3 4 LDPAK D G S |
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