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STP4435 Datasheet(PDF) 1 Page - Stanson Technology |
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STP4435 Datasheet(HTML) 1 Page - Stanson Technology |
1 / 6 page STP4435 P Channel Enhancement Mode MOSFET - 10A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STP4435 2007. V1 DESCRIPTION STP4435 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as LCD backlight, notebook computer power management, and other battery powered circuits. PIN CONFIGURATION SOP-8 PART MARKING SOP-8 Y:Year Code A:Preduce Code B:Process Code FEATURE l -30V/-9.2A, RDS(ON) =-22mΩ (Typ.) @VGS =-10V l -30V/-7.0A, RDS(ON) = 30mΩ @VGS = -4.5V l Super high density cell design for extremely low RDS(ON) l Exceptional on-resistance and maximum DC current capability l SOP-8 package design |
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