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LS3N171 Datasheet(PDF) 1 Page - Micross Components |
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LS3N171 Datasheet(HTML) 1 Page - Micross Components |
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1 / 1 page Click To Buy Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems. Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603788920, Email: chipcomponents@micross.com Web: www.micross.com/distribution.aspx FEATURES DIRECT REPLACEMENT FOR INTERSIL LS3N171 LOW DRAIN TO SOURCE RESISTANCE rDS(on) ≤ 200Ω FAST SWITCHING td(on) ≤ 3.0ns ABSOLUTE MAXIMUM RATINGS (Note 1) @ 25°C (unless otherwise noted) Maximum Temperatures Storage Temperature ‐65°C to +150°C Operating Junction Temperature ‐55°C to +135°C Maximum Power Dissipation Continuous Power Dissipation 300mW MAXIMUM CURRENT Drain to Source 30mA MAXIMUM VOLTAGES Drain to Gate ±35V Drain to Source 25V Peak Gate to Source ±35V LS3N171 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTIC MIN TYP. MAX UNITS CONDITIONS BVDSS Drain to Source Breakdown Voltage 25 ‐‐ ‐‐ V ID = 10µA, VGS = 0V VDS(on) Drain to Source “On” Voltage ‐‐ ‐‐ 2.0 ID = 10mA, VGS = 10V VGS(th) Gate to Source Threshold Voltage 1.5 ‐‐ 2.0 VDS = 10V, ID = 10µA IGSS Gate Leakage Current ‐‐ ‐‐ 10 pA VGS = ‐35V, VDS = 0V IDSS Drain Leakage Current “Off” ‐‐ ‐‐ 10 nA VGS = 10V, VDS = 10V ID(on) Drain Current “On” 10 ‐‐ ‐‐ mA VGS = 10V, VDS = 10V gfs Forward Transconductance 1000 ‐‐ ‐‐ µS VDS = 10V, ID = 2mA , f = 1kHz rDS(on) Drain to Source “On” Resistance ‐‐ ‐‐ 200 Ω VGS = 10V, ID = 0A, f = 1kHz Crss Reverse Transfer Capacitance ‐‐ ‐‐ 1.3 pF VDS = 0V, VGS = 0V , f = 1MHz Ciss Input Capacitance ‐‐ ‐‐ 5 VDS = 10V, VGS = 0V , f = 1MHz Cdb Drain to Body Capacitance ‐‐ ‐‐ 5.0 VDB = 10V, f = 1MHz SWITCHING CHARACTERISTICS SYMBOL CHARACTERISTIC MAX UNITS CONDITIONS td(on) Turn On Delay Time 3 ns VDD = 10V, ID(on) = 10mA, VGS(on) = 10V, VGS(off) = 0V, RG = 50Ω tr Turn On Rise Time 10 td(off) Turn Off Delay Time 3 tf Turn Off Fall Time 15 The LS3N171 is an enhancement mode N-Channel Mosfet LS3N171 N-CHANNEL MOSFET Micross Components Europe Tel: +44 1603 788967 Email: chipcomponents@micross.com Web: http://www.micross.com/distribution TO-72 (Bottom View) Available Packages: LS3N171 in TO-72 LS3N171 in bare die. Please contact Micross for full package and die dimensions * Body tied to case Note 1 ‐ Absolute maximum ratings are limiting values above which LS3N171 serviceability may be impaired. LS3N171 Features: Low ON Resistance Low Capacitance High Gain High Gate Breakdown Voltage Low Threshold Voltage The LS3N171 is an enhancement mode N-Channel Mosfet designed for use as a General Purpose amplifier or switch The hermetically sealed TO-72 package is well suited for high reliability and harsh environment applications. (See Packaging Information). |
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