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2SK1668 Datasheet(PDF) 3 Page - Hitachi Semiconductor |
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2SK1668 Datasheet(HTML) 3 Page - Hitachi Semiconductor |
3 / 6 page 2SK1668 3 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Drain to source breakdown voltage V (BR)DSS 250 — — V I D = 10 mA, VGS = 0 Gate to source breakdown voltage V (BR)GSS ±30 ——V I G = ±100 µA, VDS = 0 Gate to source leak current I GSS —— ±10 µAV GS = ±25 V, VDS = 0 Zero gate voltage drain current I DSS — — 250 µAV DS = 200 V, VGS = 0 Gate to source cutoff voltage V GS(off) 2.0 — 3.0 V I D = 1 mA, VDS = 10 V Static drain to source on state resistance R DS(on) — 0.4 0.55 Ω I D = 4 A, VGS = 10 V * 1 Forward transfer admittance |y fs| 3.0 5.0 — S I D = 4 A, VDS = 10 V * 1 Input capacitance Ciss — 690 — pF V DS = 10 V, VGS = 0, Output capacitance Coss — 265 — pF f = 1 MHz Reverse transfer capacitance Crss — 45 — pF Turn-on delay time t d(on) — 13 — ns I D = 4 A, VGS = 10 V, Rise time t r — 55 — ns R L = 7.5 Ω Turn-off delay time t d(off) —65 — ns Fall time t f —37 — ns Body to drain diode forward voltage V DF — 1.0 — V I F = 7 A, VGS = 0 Body to drain diode reverse recovery time t rr — 180 — ns I F = 7 A, VGS = 0, di F/dt = 100 A/µs Note 1. Pulse test See characteristic curves of 2SK1667. |
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