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PN200RM Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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PN200RM Datasheet(HTML) 2 Page - Fairchild Semiconductor |
2 / 12 page Electrical Characteristics TA = 25°C unless otherwise noted OFF CHARACTERISTICS Symbol Parameter Test Conditions Min Max Units ON CHARACTERISTICS SMALL SIGNAL CHARACTERISTICS *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors. BVCBO Collector-Base Breakdown Voltage IC = 10 µA, I B = 0 60 V BVCEO Collector-Emitter Breakdown Voltage* IC = 1.0 mA, IE = 0 45 V BVEBO Emitter-Base Breakdown Voltage IE = 10 µA, I C = 0 6.0 V ICBO Collector Cutoff Current VCB = 50 V, IE = 0 50 nA ICES Collector Cutoff Current VCE = 40 V, IE = 10 50 nA IEBO Emitter Cutoff Current VEB = 4.0 V, IC = 0 50 nA fT Current Gain - Bandwidth Product VCE = 20 V, IC = 20 mA 250 MHz Cobo Output Capacitance VCB = 10 V, f = 1.0 MHz 6.0 pF NF Noise Figure IC = 100 µA, VCE = 5.0 V, RG = 2.0 k Ω, f = 1.0 kHz 4.0 dB dB hFE DC Current Gain IC = 100 µA, VCE = 1.0 V 200 200A IC = 10 mA, VCE = 1.0 V 200 200A IC = 100 mA, VCE = 1.0 V* 200A IC = 150 mA, VCE = 5.0 V* 200 200A 80 240 100 300 100 100 100 450 600 350 VCE(sat) Collector-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA IC = 200 mA, IB = 20 mA* 0.2 0.4 V V VBE(sat) Base-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA IC = 200 mA, IB = 20 mA* 0.85 1.0 V V Typical Characteristics Typical Pulsed Current Gain vs Collector Current 0.01 0.1 1 10 100 0 100 200 300 400 500 I - COLLECTOR CURRENT (mA) C 125 °C 25 °C - 40 °C V = 5V CE Collector-Emitter Saturation Voltage vs Collect or Current 0.1 1 10 100 300 0 0.05 0.1 0.15 0.2 0.25 0.3 I - COLLECTOR CURRE NT (mA) C 25 °C - 40 °C 125 °C β = 10 PNP General Purpose Amplifier (continued) |
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Similar Description - PN200RM |
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