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PSMN022-30BL Datasheet(PDF) 8 Page - NXP Semiconductors |
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PSMN022-30BL Datasheet(HTML) 8 Page - NXP Semiconductors |
8 / 14 page PSMN022-30BL All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved. Product data sheet Rev. 1 — 21 March 2012 8 of 14 NXP Semiconductors PSMN022-30BL N-channel 30 V 22.6 m Ω logic level MOSFET in D2PAK Fig 11. Gate-source threshold voltage as a function of junction temperature Fig 12. Drain-source on-state resistance as a function of drain current; typical values Fig 13. Normalized drain-source on-state resistance factor as a function of junction temperature Fig 14. Gate charge waveform definitions 003a a c982 0 1 2 3 -60 0 60 120 180 Tj ( °C) VGS(th) (V) max typ min 003a a d423 0 20 40 60 80 100 010 20 30 ID (A) RDSon (m Ω) 3 10 3.5 VGS (V) = 4.5 03aa27 0 0.5 1 1.5 2 −60 0 60 120 180 Tj ( °C) a 003aaa508 VGS VGS(th) QGS1 QGS2 QGD VDS QG(tot) ID QGS VGS(pl) |
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