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© 2003 IXYS All rights reserved

IXYS Semiconductor GmbH

Edisonstr. 15,

D-68623 Lampertheim

Phone: +49-6206-503-0, Fax: +49-6206-503627

IXYS Corporation

3540 Bassett Street, Santa Clara CA 95054

Phone: (408) 982-0700, Fax: 408-496-0670

IXBP 5N160 G

IXBH 5N160 G

I

C25

= 5.7 A

V

CES

= 1600 V

V

t

f

= 70 ns

High Voltage

Monolithic Bipolar MOS Transistor

A = Anode, C = Cathode , TAB = Cathode

G

E

C

C (TAB)

G

C

E

C (TAB)

IXYS reserves the right to change limits, test conditions and dimensions.

IGBT

Symbol

Conditions

Maximum Ratings

V

CES

T

1600

V

V

GES

± 20

V

I

C25

T

25°C

5.7

A

I

C90

T

90°C

3.5

A

I

CM

V

6

A

V

CEK

RBSOA, Clamped inductive load; L = 100 µH

0.8V

CES

P

tot

T

68

W

Symbol

Conditions

Characteristic Values

(T

min.

typ.

max.

V

CE(sat)

I

T

25°C

4.9

7.2

V

T

5.6

V

V

GE(th)

I

3.5

5.5

V

I

CES

V

T

25°C

150

µA

V

50

µA

I

GES

V

100

nA

t

d(on)

140

ns

t

r

200

ns

t

d(off)

120

ns

t

f

70

ns

C

ies

V

325

pF

Q

Gon

V

26

nC

V

F

(reverse conduction); I

6

V

R

thJC

1.85 K/W

Inductive load, T

V

V

Features

- substitute for high voltage MOSFETs

with significantly lower voltage drop

- MOSFET compatible control

10 V turn on gate voltage

- fast switching for high frequency

operation

- reverse conduction capability

• industry standard package

- TO-220AB

- TO-247AD

epoxy meets UL94V-0

Applications

• switched mode power supplies

• DC-DC converters

• resonant converters

• lamp ballasts

• laser generators, x ray generators

G

C

E

Preliminary data sheet