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IXGQ28N120B Datasheet(PDF) 5 Page - IXYS Corporation

Part # IXGQ28N120B
Description  High Voltage IGBT with Diode
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Manufacturer  IXYS [IXYS Corporation]
Direct Link  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXGQ28N120B Datasheet(HTML) 5 Page - IXYS Corporation

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© 2003 IXYS All rights reserved
IXGQ 28N120B
IXGQ28N120BD1
Fig. 16. Maxim um Trans ient Therm al Res istance
0.10
1.00
1
10
100
1000
Pulse Width - milliseconds
0.50
Fig. 14. Gate Charge
0
3
6
9
12
15
0
10
2030
4050
6070
8090
100
Q
G - nanoCoulombs
V
CE = 600V
I
C = 28A
I
G= 10m A
Fig. 15. Capacitance
10
100
1000
10000
0
5
10
15
20
25
30
35
40
V
C E - V olts
Cies
Coes
Cres
f = 1 MHz
Fig. 13. De pende nce of Turn-off
Sw itching Tim e on Te m perature
50
100
150
200
250
300
350
400
450
500
550
25
35
45
55
65
75
85
95
105 115 125
T
J - Degrees Centigrade
I
C = 14A
t
d(off)
t
fi
- - - - - -
R
G = 5Ω
V
GE = 15V
V
CE = 960V
I
C = 28A
I
C = 14A
I
C = 56A


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