© 2009 IXYS All rights reserved

4 - 4

20090209b

IXKC 15N60C5

IXYS reserves the right to change limits, test conditions and dimensions.

Advanced Technical Information

single pulse

0.01

0.02

0.05

0.1

0.2

0.5

10

0

10

-1

10

-2

10

-3

10

-4

10

-5

10

0

10

-1

10

-2

typ

98%

0

0.1

0.2

0.3

0.4

0.5

-60

-20

20

60

100

140

180

25 °C

150 °C

0

20

40

60

80

100

02

46

8

10

7V

10 V

0

0.2

0.4

0.6

0.8

1

1.2

0

10

2030

4050

5V

5.5 V

6V

6.5 V

120V

40 0V

0

1

2

3

4

5

6

7

8

9

10

0

10

203040

25 °C

150 °C

25 °C, 98%

150 °C, 98%

10

2

10

1

10

0

10

-1

00.5

11.5

2

Ciss

Coss

Crss

10

5

10

4

10

3

10

2

10

1

10

0

0

100

200

300

400

500

0

100

200

300

400

500

600

20

60

100

140

180

540

580

620

660

700

-60

-20

20

60

100

140

180

f = 1 MHz

Fig. 5 Drain-source on-state resistance

Fig. 4 Typ. drain-source on-state resistance

Fig. 7 Forward characteristic

of reverse diode

Fig. 8

Typ. gate charge

Fig. 10 Avalanche energy

Fig. 11 Drain-source breakdown voltage

Fig. 6 Typ. transfer characteristics

Fig. 9 Typ. capacitances