2SK2922 datasheet(2/7 Pages) HITACHI

Part #	2SK2922

Description	Silicon N Channel MOS FET UHF Power Amplifier

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Manufacturer	HITACHI [Hitachi Semiconductor]

Direct Link	http://www.renesas.com/eng

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2SK2922

2

Absolute Maximum Ratings (Ta = 25

°C)

Item

Symbol

Ratings

Unit

Drain to source voltage

V

DSS

10

V

Gate to source voltage

V

GSS

±6V

Drain current

I

D

0.7

A

Drain peak current

I

D(pulse)

Note1

1.4

A

Channel dissipation

Pch

Note2

3W

Channel temperature

Tch

150

°C

Storage temperature

Tstg

–45 to +150

°C

Note:

1. PW

≤ 10ms, duty cycle ≤ 50 %

2. Value at Tc = 25

°C

Electrical Characteristics (Ta = 25

°C)

Item

Symbol Min

Typ

Max

Unit

Test Conditions

Zero gate voltage drain current

I

DSS

—

100

µAV

DS = 10 V, VGS = 0

Gate to source leak current

I

GSS

——

±5.0

µAV

GS = ±6V, VDS = 0

Gate to source cutoff voltage

V

GS(off)

0.4

—

1.2

V

I

D = 3mA, VDS = 5V

Input capacitance

Ciss

—

27

—

pF

V

GS = 2V, VDS = 0, f = 1MHz

Output capacitance

Coss

—

13

—

pF

V

DS = 5, VGS = 0, f = 1MHz

Output Power

Pout

31

—

dBm

V

DS = 4.7V, f =836.5Mhz

Pin = 23dBm

Drain Rational

ηD

57

——%

V

DS = 4.7V, f =836.5Mhz

Pin = 23dBm

Note:

1. Marking is “HX”.

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