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2SK3153 Datasheet(PDF) 5 Page - Hitachi Semiconductor |
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2SK3153 Datasheet(HTML) 5 Page - Hitachi Semiconductor |
5 / 9 page 2SK3153 5 0.1 0.3 1 3 10 30 0 10 20 30 40 50 100 1000 300 200 160 120 80 40 0 20 16 12 8 4 20 40 60 80 100 0 100 10 20 2 1 0.1 0.2 2 10 1000 100 300 30 10 30 20 1 Reverse Drain Current I (A) DR Body–Drain Diode Reverse Recovery Time Drain to Source Voltage V (V) DS Typical Capacitance vs. Drain to Source Voltage Gate Charge Qg (nc) Dynamic Input Characteristics Drain Current I (A) D Switching Characteristics 10 I = 15 A D VGS 0.5 5 50 5 50 3000 VDS V = 120 V 50 V 25 V DD di / dt = 50 A / µs V = 0, Ta = 25 °C GS 10000 V = 0 f = 1 MHz GS Ciss Coss Crss V = 120 V 50 V 25 V DD 200 500 1000 r t d(on) t d(off) t t f V = 10 V, V = 30 V PW = 5 µs, duty < 1 % GS DD |
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