2SK3349 datasheet(2/8 Pages) HITACHI

Part #	2SK3349

Description	Silicon N Channel MOS FET High Speed Switching

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Manufacturer	HITACHI [Hitachi Semiconductor]

Direct Link	http://www.renesas.com/eng

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2SK3349

2

Absolute Maximum Ratings (Ta = 25

°C)

Item

Symbol

Ratings

Unit

Drain to source voltage

V

DSS

20

V

Gate to source voltage

V

GSS

±10

V

Drain current

I

D

50

mA

Drain peak current

I

D(pulse)

Note1

200

mA

Body-drain diode reverse drain current

I

DR

50

mA

Channel dissipation

Pch

Note 2

100

mW

Channel temperature

Tch

150

°C

Storage temperature

Tstg

–55 to +150

°C

Note:

1. PW

≤ 10 µs, duty cycle ≤ 1%

2. Value on the alumina ceramic board (12.5x20x0.7 mm)

Electrical Characteristics (Ta = 25

°C)

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

Drain to source breakdown

voltage

V

(BR)DSS

20

——V

I

D = 100 µA, VGS = 0

Gate to source breakdown

voltage

V

(BR)GSS

±10

——V

I

G = ±100 µA, VDS = 0

Gate to source leak current

I

GSS

——

±5

µAV

GS = ±8 V, VDS = 0

Zero gate voltege drain

current

I

DSS

——

1

µAV

DS = 20 V, VGS = 0

Gate to source cutoff voltage

V

GS(off)

0.8

—

1.8

V

I

D = 10 µA, VDS = 5 V

Static drain to source on state R

DS(on)

—

2.8

3.6

Ω

I

D = 25 mA,VGS = 4 V

Note 3

resistance

R

DS(on)

—

4.8

7.2

Ω

I

D = 10 mA,VGS = 2.5 V

Note 3

Forward transfer admittance

|y

fs|56

85

—

mS

I

D = 25 mA, VDS = 10 V

Note 3

Input capacitance

Ciss

—

6

—

pF

V

DS = 10 V

Output capacitance

Coss

—

7

—

pF

V

GS = 0

Reverse transfer capacitance Crss

—

1.2

—

pF

f = 1 MHz

Turn-on delay time

t

d(on)

—

120

—

ns

I

D = 25 mA, VGS = 4 V

Rise time

t

r

—

450

—

ns

R

L = 400 Ω

Turn-off delay time

t

d(off)

—

480

—

ns

Fall time

t

f

—

500

—

ns

Note:

3. Pulse test

4. Marking is DN

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