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2SK3349 Datasheet(PDF) 2 Page - Hitachi Semiconductor |
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2SK3349 Datasheet(HTML) 2 Page - Hitachi Semiconductor |
2 / 8 page 2SK3349 2 Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Ratings Unit Drain to source voltage V DSS 20 V Gate to source voltage V GSS ±10 V Drain current I D 50 mA Drain peak current I D(pulse) Note1 200 mA Body-drain diode reverse drain current I DR 50 mA Channel dissipation Pch Note 2 100 mW Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Note: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value on the alumina ceramic board (12.5x20x0.7 mm) Electrical Characteristics (Ta = 25 °C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V (BR)DSS 20 ——V I D = 100 µA, VGS = 0 Gate to source breakdown voltage V (BR)GSS ±10 ——V I G = ±100 µA, VDS = 0 Gate to source leak current I GSS —— ±5 µAV GS = ±8 V, VDS = 0 Zero gate voltege drain current I DSS —— 1 µAV DS = 20 V, VGS = 0 Gate to source cutoff voltage V GS(off) 0.8 — 1.8 V I D = 10 µA, VDS = 5 V Static drain to source on state R DS(on) — 2.8 3.6 Ω I D = 25 mA,VGS = 4 V Note 3 resistance R DS(on) — 4.8 7.2 Ω I D = 10 mA,VGS = 2.5 V Note 3 Forward transfer admittance |y fs|56 85 — mS I D = 25 mA, VDS = 10 V Note 3 Input capacitance Ciss — 6 — pF V DS = 10 V Output capacitance Coss — 7 — pF V GS = 0 Reverse transfer capacitance Crss — 1.2 — pF f = 1 MHz Turn-on delay time t d(on) — 120 — ns I D = 25 mA, VGS = 4 V Rise time t r — 450 — ns R L = 400 Ω Turn-off delay time t d(off) — 480 — ns Fall time t f — 500 — ns Note: 3. Pulse test 4. Marking is DN |
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