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3SK297 Datasheet(PDF) 4 Page - Hitachi Semiconductor |
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3SK297 Datasheet(HTML) 4 Page - Hitachi Semiconductor |
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4 / 11 page  3SK297 4 200 150 100 50 0 50 100 150 200 Ambient Temperature Ta ( °C) Maximum Channel Power Dissipation Curve 20 16 12 8 4 02 4 6 8 10 1.0 V 0.8 V 1.4 V 1.2 V 0.6 V G1S V = 0.4 V Drain to source voltage V (V) DS Typical Output Characteristics V = 3 V G2S Pulse test 20 16 12 8 4 0 123 45 G2S V = 0.5 V 3.0 V 2.5 V 2.0 V 1.5 V V = 6 V DS Gate1 to source voltage V (V) G1S Drain Current vs. Gate1 to Source Voltage 1.0 V Pulse test 20 16 12 8 4 0 123 45 G1S V = 0.5 V 3.0 V 2.5 V 2.0 V 1.5 V V = 6 V DS Gate2 to source voltage V (V) G2S Drain Current vs. Gate2 to Source Voltage 1.0 V Pulse test |
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