3SK318 datasheet(2/9 Pages) HITACHI

Part #	3SK318

Description	Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier

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Manufacturer	HITACHI [Hitachi Semiconductor]

Direct Link	http://www.renesas.com/eng

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2 / 9 page

3SK318

2

Absolute Maximum Ratings (Ta = 25

°C)

Item

Symbol

Ratings

Unit

Drain to source voltage

V

DS

6V

Gate1 to source voltage

V

G1S

±6V

Gate2 to source voltage

V

G2S

±6V

Drain current

I

D

20

mA

Channel power dissipation

Pch

100

mW

Channel temperature

Tch

150

°C

Storage temperature

Tstg

–55 to +150

°C

Electrical Characteristics (Ta = 25

°C)

Item

Symbol Min

Typ

Max

Unit

Test Conditions

Drain to source breakdown

voltage

V

(BR)DSS

6

——V

I

D = 200µA, VG1S = VG2S = 0

Gate1 to source breakdown

voltage

V

(BR)G1SS

±6

——V

I

G1 = ±10µA, VG2S = VDS = 0

Gate2 to source breakdown

voltage

V

(BR)G2SS

±6

——V

I

G2 = ±10µA, VG1S = VDS = 0

Gate1 to source cutoff current

I

G1SS

——

±100

nA

V

G1S = ±5V, VG2S = VDS = 0

Gate2 to source cutoff current

I

G2SS

——

±100

nA

V

G2S = ±5V, VG1S = VDS = 0

Gate1 to source cutoff voltage V

G1S(off)

0.5

0.7

1.0

V

DS = 5V, VG2S = 3V

I

D = 100µA

Gate2 to source cutoff voltage V

G2S(off)

0.5

0.7

1.0

V

DS = 5V, VG1S = 3V

I

D = 100µA

Drain current

I

DS(op)

0.5

4

10

mA

V

DS = 3.5V, VG1S = 1.1V

V

G2S = 3V

Forward transfer admittance

|y

fs|

182432mS

V

DS = 3.5V, VG2S = 3V

I

D = 10mA , f = 1kHz

Input capacitance

C

iss

1.3

1.6

1.9

pF

V

DS = 3.5V, VG2S = 3V

Output capacitance

C

oss

0.9

1.2

1.5

pF

I

D = 10mA , f= 1MHz

Reverse transfer capacitance

C

rss

—

0.019

0.03

pF

Power gain

PG

18

21

—

dB

V

DS = 3.5V, VG2S = 3V

Noise figure

NF

—

1.4

2.2

dB

I

D = 10mA , f = 900MHz

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