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4AK22 Datasheet(PDF) 2 Page - Hitachi Semiconductor

Part # 4AK22
Description  Silicon N-Channel Power MOS FET Array
Download  6 Pages
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Manufacturer  HITACHI [Hitachi Semiconductor]
Direct Link  http://www.renesas.com/eng
Logo HITACHI - Hitachi Semiconductor

4AK22 Datasheet(HTML) 2 Page - Hitachi Semiconductor

  4AK22 Datasheet HTML 1Page - Hitachi Semiconductor 4AK22 Datasheet HTML 2Page - Hitachi Semiconductor 4AK22 Datasheet HTML 3Page - Hitachi Semiconductor 4AK22 Datasheet HTML 4Page - Hitachi Semiconductor 4AK22 Datasheet HTML 5Page - Hitachi Semiconductor 4AK22 Datasheet HTML 6Page - Hitachi Semiconductor  
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background image
4AK22
2
Outline
SP-10
2 G
1 S
4
G
6
G
8
G
3
D
5
D
7
D
9
D
S 10
1, 10.
Source
2, 4, 6, 8. Gate
3, 5, 7, 9. Drain
1
2
3
4 5
6
7 8
9
10
Absolute Maximum Ratings (Ta = 25°C) (1 Unit)
Item
Symbol
Rating
Unit
Drain to source voltage
V
DSS
120
V
Gate to source voltage
V
GSS
±20
V
Drain current
I
D
3A
Drain peak current
I
D(pulse)*
1
12
A
Body to drain diode reverse drain current
I
DR
3A
Channel dissipation
Pch (Tc = 25
°C)*2 28
W
Channel dissipation
Pch*
2
4W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤ 10 µs, duty cycle ≤ 1%
2. 4 devices operation


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