BB101M datasheet(2/11 Pages) HITACHI

Part #	BB101M

Description	Build in Biasing Circuit MOS FET IC UHF RF Amplifier

Download	11 Pages

Scroll/Zoom	100%

Manufacturer	HITACHI [Hitachi Semiconductor]

Direct Link	http://www.renesas.com/eng

Logo

2 / 11 page

BB101M

2

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Ratings

Unit

Drain to source voltage

V

DS

6V

Gate 1 to source voltage

V

G1S

+6

–0

V

Gate 2 to source voltage

V

G2S

±6V

Drain current

I

D

25

mA

Channel power dissipation

Pch

150

mW

Channel temperature

Tch

150

°C

Storage temperature

Tstg

–55 to +150

°C

Similar Part No. - BB101M

Manufacturer	Part #	Datasheet	Description
Renesas Technology Corp	BB101M	274Kb / 8P	Built in Biasing Circuit MOS FET IC UHF RF Amplifier
Renesas Technology Corp	BB101MAU-TL-E	274Kb / 8P	Built in Biasing Circuit MOS FET IC UHF RF Amplifier

More results

Similar Description - BB101M

Manufacturer	Part #	Datasheet	Description
Hitachi Semiconductor	BB101C	48Kb / 11P	Build in Biasing Circuit MOS FET IC UHF RF Amplifier
	BB301C	46Kb / 10P	Build in Biasing Circuit MOS FET IC UHF RF Amplifier
	BB102C	62Kb / 11P	Build in Biasing Circuit MOS FET IC UHF RF Amplifier
	BB302M	61Kb / 11P	Build in Biasing Circuit MOS FET IC UHF RF Amplifier
Renesas Technology Corp	BB505M	187Kb / 9P	Build in Biasing Circuit MOS FET IC UHF RF Amplifier
Hitachi Semiconductor	BB102M	64Kb / 11P	Build in Biasing Circuit MOS FET IC UHF RF Amplifier
	BB302C	58Kb / 11P	Build in Biasing Circuit MOS FET IC UHF RF Amplifier
	BB304C	67Kb / 12P	Build in Biasing Circuit MOS FET IC UHF RF Amplifier
	BB301M	46Kb / 10P	Build in Biasing Circuit MOS FET IC UHF RF Amplifier
	BB601M	67Kb / 13P	Build in Biasing Circuit MOS FET IC UHF RF Amplifier

More results

BB101M Datasheet(PDF) 2 Page - Hitachi Semiconductor

BB101M Datasheet(HTML) 2 Page - Hitachi Semiconductor

Similar Part No. - BB101M

Similar Description - BB101M

Html Pages

1 2 3 4 5 6 7 8 9 10 11

Datasheet Download

Link URL