IXYS reserves the right to change limits, test conditions, and dimensions.

IXTC220N055T

≤ 300 μs, duty cycle d ≤ 2 %;

2. Drain and Source Kelvin contacts must be located less than 5 mm from

the plastic body.

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

V

75

120

S

C

iss

7200

pF

C

oss

V

1270

pF

C

rss

285

pF

t

d(on)

36

ns

t

r

V

62

ns

t

d(off)

R

53

ns

t

f

53

ns

Q

g(on)

158

nC

Q

gs

V

42

nC

Q

gd

46

nC

R

thJC

1.0

°C/W

R

thCS

0.25

°C/W

Source-Drain Diode

Characteristic Values

T

Symbol

Test Conditions

Min.

Typ.

Max.

I

S

V

220

A

I

SM

Pulse width limited by T

JM

600

A

V

SD

I

1.0

V

t

rr

I

ns

V

Note: Bottom heatsink (Pin 4) is

electrically isolated from Pins 1,2, and 3.

1.Gate

2. Drain

ISOPLUS220 (IXTC) Outline

IXYS MOSFETs and IGBTs are covered by 4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

one or moreof the following U.S. patents:

4,850,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405B2

6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6771478 B2

7,071,537

PRELIMINARYTECHNICALINFORMATION

The product presented herein is under development. The Technical Specifications

offered are derived from data gathered during objective characterizations of preliminary

engineering lots; but also may yet contain some information supplied during a pre-

production design evaluation. IXYS reserves the right to change limits, test conditions,

and dimensions without notice.