SSF2N60D

2013.08.27

Version : 1.0

page 1 of 8

www.silikron.com

Main Product Characteristics

Features and Benefits

Description

Absolute Max Rating

Symbol

Parameter

Max.

Units

2

A

1.3

8

42

W

Linear Derating Factor

0.34

W/°C

Drain-Source Voltage

600

V

Gate-to-Source Voltage

±30

V

Single Pulse Avalanche Energy @ L=53mH

116

mJ

Avalanche Current @ L=53mH

2.1

A

Operating Junction and Storage Temperature Range

-55 to +150

°C

600V

3.8

Ω (typ.)

2A

TO-252

Marking and Pin

Assignment

Schematic Diagram



Advanced MOSFET process technology



Special designed for PWM, load switching and

general purpose applications



Ultra low on-resistance with low gate charge



Fast switching and reverse body recovery



150℃ operating temperature

It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with

high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable

device for use in power switching application and a wide variety of other applications.