SSF6NS70UGS datasheet(1/8 Pages) SILIKRON

Part #	SSF6NS70UGS

Description	High dv/dt and avalanche capabilities

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Manufacturer	SILIKRON [Silikron Semiconductor Co.,LTD.]

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SSF6NS70UGS

©Silikron Semiconductor CO.,LTD.

2013.07.17

Version : 1.0

page 1 of 8

www.silikron.com

Main Product Characteristics:

Features and Benefits:

Description:

Absolute max Rating:

Symbol

Parameter

Max.

Units

ID @ TC = 25°C

Continuous Drain Current, VGS @ 10V

6 ①

A

ID @ TC = 100°C

Continuous Drain Current, VGS @ 10V

3.7①

IDM

Pulsed Drain Current ②

18

PD @TC = 25°C

Power Dissipation ③

28

W

Linear Derating Factor

0.224

W/°C

VDS

Drain-Source Voltage

700

V

VGS

Gate-to-Source Voltage

±30

V

EAS

Single Pulse Avalanche Energy @ L=100mH

72

mJ

IAS

Avalanche Current @ L=100mH

1.2

A

TJ

TSTG

Operating Junction and Storage Temperature Range

-55 to +150

°C

VDSS

700V

RDS(on)

1.1

Ω (typ.)

ID

6A ①

TO-251S

Marking and pin

Assignment

Schematic diagram



High dv/dt and avalanche capabilities



100% avalanche tested



Low input capacitance and gate charge



Low gate input resistance

The SSF6NS70UGS series MOSFETs is a new technology, which combines an innovative super

junction technology and advance process.

This new technology achieves low Rdson, energy saving,

high reliability and uniformity, superior power density and space saving.

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SSF6NS70UGS Datasheet(PDF) 1 Page - Silikron Semiconductor Co.,LTD.

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