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SSF8N80 Datasheet(PDF) 1 Page - Silikron Semiconductor Co.,LTD. |
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SSF8N80 Datasheet(HTML) 1 Page - Silikron Semiconductor Co.,LTD. |
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1 / 8 page  SSF8N80 ©Silikron Semiconductor CO.,LTD. 2012.04.28 Version : 1.1 page 1 of 8 www.silikron.com Main Product Characteristics: Features and Benefits: Description: Absolute max Rating: Symbol Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V① 8 A ID @ TC = 100°C Continuous Drain Current, VGS @ 10V① 5.1 IDM Pulsed Drain Current② 32 PD @TC = 25°C Power Dissipation③ 178 W Linear Derating Factor 1.43 W/°C VDS Drain-Source Voltage 800 V VGS Gate-to-Source Voltage ±30 V EAS Single Pulse Avalanche Energy @ L=25mH 512 mJ IAS Avalanche Current @ L=25mH 6.4 A TJ TSTG Operating Junction and Storage Temperature Range -55 to + 150 °C VDSS 800V RDS(on) 1.38 Ω(typ.) ID 8A TO-220 Marking and pin Assignment Schematic diagram Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150℃ operating temperature It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. |
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