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HAT1029R Datasheet(PDF) 6 Page - Hitachi Semiconductor |
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HAT1029R Datasheet(HTML) 6 Page - Hitachi Semiconductor |
6 / 10 page HAT1029R 6 Reverse Drain Current I (A) DR Body–Drain Diode Reverse Recovery Time Drain to Source Voltage V (V) DS Typical Capacitance vs. Drain to Source Voltage Gate Charge Qg (nc) Dynamic Input Characteristics 500 200 100 20 50 10 5 0 2000 1000 500 200 100 50 20 –4 –8 –12 –16 –20 0 –10 –20 –30 –40 0 0 –2 –4 –6 –8 –10 –50 4 8 12 16 20 DS V GS V V = –5 V –10 V –20 V DD DD V = –20 V –10 V –5 V D I = –3.5 A –0.2 –0.5 –1 –2 –5 –10 –0.1 di / dt = 20 A / µs V = 0, Ta = 25 °C GS Ciss Coss Crss V = 0 f = 1 MHz GS Drain Current I (A) D Switching Characteristics 500 200 100 20 50 10 5 –0.2 –0.5 –1 –2 –5 –10 –0.1 t f r t d(off) t d(on) t V = –4 V, V = –10 V PW = 3 µs, duty < 1 % GS DD |
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