HAT1029R datasheet(6/10 Pages) HITACHI

Part #	HAT1029R

Description	Silicon P Channel Power MOS FET High Speed Power Switching

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Manufacturer	HITACHI [Hitachi Semiconductor]

Direct Link	http://www.renesas.com/eng

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6 / 10 page

HAT1029R

6

Reverse Drain Current

I

(A)

DR

Body–Drain Diode Reverse

Recovery Time

Drain to Source Voltage V

(V)

DS

Typical Capacitance vs.

Drain to Source Voltage

Gate Charge

Qg (nc)

Dynamic Input Characteristics

500

200

100

20

50

10

5

0

2000

1000

500

200

100

50

20

–4

–8

–12

–16

–20

0

–10

–20

–30

–40

0

–2

–4

–6

–8

–10

–50

4

8

12

16

20

DS

V

GS

V

= –5 V

–10 V

–20 V

DD

V

= –20 V

–10 V

–5 V

D

I

= –3.5 A

–0.2

–0.5

–1

–2

–5

–10

–0.1

di / dt = 20 A /

µs

V

= 0, Ta = 25

°C

GS

Ciss

Coss

Crss

V

= 0

f = 1 MHz

GS

Drain Current

I

(A)

D

Switching Characteristics

500

200

100

20

50

10

5

–0.2

–0.5

–1

–2

–5

–10

–0.1

t f

r

t

d(off)

t

d(on)

t

V

= –4 V, V

= –10 V

PW = 3

µs, duty < 1 %

GS

DD

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HAT1029R Datasheet(PDF) 6 Page - Hitachi Semiconductor

HAT1029R Datasheet(HTML) 6 Page - Hitachi Semiconductor

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