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SSF1016A Datasheet(PDF) 2 Page - Silikron Semiconductor Co.,LTD. |
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SSF1016A Datasheet(HTML) 2 Page - Silikron Semiconductor Co.,LTD. |
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2 / 8 page  SSF1016A ©Silikron Semiconductor CO.,LTD. 2011.06.25 Version : 1.0 page 2 of 8 www.silikron.com Thermal Resistance Symbol Characterizes Typ. Max. Units RθJC Junction-to-case ③ — 0.55 ℃ /W RθJA Junction-to-ambient (t ≤ 10s)④ — 62 ℃ /W Junction-to-Ambient (PCB mounted, steady-state) ④ — 40 ℃ /W Electrical Characterizes @TA=25℃ unless otherwise specified Symbol Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source breakdown voltage 100 — — V VGS = 0V,ID = 250μA RDS(on) Static Drain-to-Source on-resistance — 13.8 16 mΩ VGS=10V,ID = 30A — 28.8 — TJ = 125°C VGS(th) Gate threshold voltage 2 — 4 V VDS = VGS, ID = 250μA — 2.3 — TJ = 125°C IDSS Drain-to-Source leakage current — — 1 μA VDS = 100V,VGS = 0V — — 50 TJ = 125°C IGSS Gate-to-Source forward leakage — — 100 nA VGS =20V -100 — — VGS = -20V Qg Total gate charge — 92 — nC ID = 50A, VDS=35V, VGS = 10V Qgs Gate-to-Source charge — 21 — Qgd Gate-to-Drain("Miller") charge — 31 — td(on) Turn-on delay time — 17 — ns VGS=10V, VDS=30V, RL=15Ω, RGEN=2.5Ω ID=2.0A tr Rise time — 14 — td(off) Turn-Off delay time — 53 — tf Fall time — 12 — Ciss Input capacitance — 4415 — pF VGS =10V VDS = 25V ƒ = 1MHz Coss Output capacitance — 60 — Crss Reverse transfer capacitance — 30 — Source-Drain Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current (Body Diode) — — 75 ① A MOSFET symbol showing the integral reverse p-n junction diode. ISM Pulsed Source Current (Body Diode) — — 300 A V SD Diode Forward Voltage — 0.85 1.3 V IS=30A, VGS=0V trr Reverse Recovery Time — 47 — ns TJ = 25°C, IF =35A, di/dt = 100A/μs Qrr Reverse Recovery Charge — 116 — nC |
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