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HAT2019R Datasheet(PDF) 5 Page - Hitachi Semiconductor |
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HAT2019R Datasheet(HTML) 5 Page - Hitachi Semiconductor |
5 / 9 page HAT2019R 5 0.2 0.5 1 2 5 10 0.1 500 200 100 20 50 10 5 010 20 30 40 50 10000 3000 1000 300 100 30 10 Ciss Coss Crss V = 0 f = 1 MHz GS 50 40 30 20 10 0 816 24 32 40 0 5 500 20 50 10 0.2 0.5 1 2 5 10 20 di/dt = 20 A/µs V = 0, Ta = 25°C GS VGS VDS I = 8 A D V = 5 V 10 V 25 V DD V = 25 V 10 V 5 V DD V = 4 V, V = 10 V PW = 3 µs, duty < 1 % GS DD t f r t d(off) t d(on) t Reverse Drain Current I (A) DR Body–Drain Diode Reverse Recovery Time Drain to Source Voltage V (V) DS Typical Capacitance vs. Drain to Source Voltage Gate Charge Qg (nc) Dynamic Input Characteristics Drain Current I (A) D Switching Characteristics 10 8 6 4 2 10 8 6 4 2 |
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