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SSF1090D Datasheet(PDF) 2 Page - Silikron Semiconductor Co.,LTD. |
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SSF1090D Datasheet(HTML) 2 Page - Silikron Semiconductor Co.,LTD. |
2 / 8 page SSF1090D ©Silikron Semiconductor CO.,LTD. 2013.04.11 Version : 1.2 page 2 of 8 www.silikron.com Thermal Resistance Symbol Characterizes Typ. Max. Units RθJC Junction-to-case ③ — 3.85 ℃/W RθJA Junction-to-Ambient (t ≤ 10s)④ — 60 ℃/W Junction-to-Ambient (PCB mounted, steady-state) ④ — 42 ℃/W Electrical Characterizes @TA=25℃ unless otherwise specified Symbol Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source breakdown voltage 100 — — V VGS = 0V, ID = 250μA RDS(on) Static Drain-to-Source on-resistance — 60 90 m Ω VGS=10V,ID = 2A — 125 — TJ = 125℃ VGS(th) Gate threshold voltage 2 — 4 V VDS = VGS, ID = 250μA — 2.46 — TJ = 125℃ IDSS Drain-to-Source leakage current — — 1 μA VDS = 30V, VGS =0V — — 50 TJ = 125℃ IGSS Gate-to-Source forward leakage — — 100 A VGS =20V Gate-to-Source reverse leakage — — -100 VGS = -20V Qg Total gate charge — 20 — nC ID = 9.2A VDD=80V VGS = 10V Qgs Gate-to-Source charge — 4.3 — Qgd Gate-to-Drain("Miller") charge — 7.6 — td(on) Turn-on delay time — 11 — ns VGS=10V, VDD=50V, RL=5.4Ω,RGEN=18Ω ID =9.2A tr Rise time — 31 — td(off) Turn-Off delay time — 39 — tf Fall time — 28 — Ciss Input capacitance — 739 — pF VGS = 0V VDS = 25V ƒ = 1MHz Coss Output capacitance — 58 — Crss Reverse transfer capacitance — 40 — Source-Drain Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current (Body Diode) — — 15 ① A MOSFET symbol showing the integral reverse p-n junction diode. ISM Pulsed Source Current (Body Diode) — — 60 A V SD Diode Forward Voltage — 0.8 1.5 V IS=3A, VGS=0V,TJ= 25°C trr Reverse Recovery Time — 35 — ns TJ =25°C, IF =9.2A, di/dt = 100 A/μs Qrr Reverse Recovery Charge — 67 — nC |
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