3

Absolute Maximum Ratings

Thermal Information

ESD classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 2

Operating Conditions

Thermal resistance (Typical, Note 1)

θ

SOIC package . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

65

TSSOP package . . . . . . . . . . . . . . . . . . . . . . . . . . .

90

(lead tips only)

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the

device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTE:

1.

θ

Electrical Specifications

Recommended operating conditions, unless otherwise noted

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

VCC SUPPLY CURRENT

Nominal supply

UGATE and LGATE open

-

5

-

mA

POWER-ON RESET

Rising VCC threshold

-

-

10.4

V

Falling VCC threshold

8.2

-

-

V

-1.26-

V

OSCILLATOR

Free running frequency

RT = open

185

200

215

kHz

Total variation

6k

Ω < RT to GND < 200kΩ

-15

-

+15

%

Ramp amplitude

∆V

OSC

RT = open

-

1.9

-

REFERENCE AND DAC

DAC (VID0-VID4) input low voltage

--

0.8V

DAC (VID0-VID4) input high voltage

2.0

-

-

V

DACOUT voltage accuracy

-1.0

-

+1.0

%

ERROR AMPLIFIER

DC gain

-88-

dB

Gain-bandwidth product

GBWP

-

15

-

MHz

Slew rate

SR

COMP = 10pF

-

6

-

V/

µs

GATE DRIVERS

Upper gate source

350

500

-

mA

Upper gate sink

-

5.5

10

Ω

Lower gate source

300

450

-

mA

Lower gate sink

-

3.5

6.5

Ω

PROTECTION

Overvoltage trip (VSEN/DACOUT)

-

115

120

%

OCSET current source

170

200

230

µA

OVP sourcing current

60

-

-

mA

Soft start current

-10-

µA

POWER GOOD

Upper threshold (VSEN/DACOUT)

VSEN rising

106

-

111

%

Lower threshold (VSEN/DACOUT)

VSEN falling

89

-

94

%

Hysteresis (VSEN/DACOUT)

Upper and lower threshold

-

2

-

%

PGOOD voltage low

-

0.3

-

V

HIP6004E